unisonic technologies co., ltd 12n50k-mt power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2015 unisonic technologies co., ltd qw-r502-b26.c 12a, 500v n-channel power mosfet ? description the utc 12n50k-mt is an n-channel mode power mosfet using utc?s advanced technology to provide customers with planar stripe and dmos technology. this technology allows a minimum on-state resistance and superior sw itching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 12n50k-mt is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. ? features * r ds(on) < 0.52 ? @ v gs = 10 v, i d = 6 a * high switching speed * 100% avalanche tested ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 12n50kl-tf2-t 12N50KG-TF2-T to-220f2 g d s tube note: pin assignment: g: gate d: drain s: source ? marking
12n50k-mt power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-b26.c ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 500 v gate-source voltage v gss 30 v continuous (t c =25c) i d 12 (note 2) a drain current pulsed (note 3) i dm 48 (note 2) a avalanche current (note 3) i ar 12 a single pulsed (note 4) e as 600 mj avalanche energy repetitive (note 5) e ar 19.5 mj peak diode recovery dv/dt (note 5) dv/dt 4.5 v/ns power dissipation 54 w derate above 25c p d 0.43 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. drain current limited by maximum junction temperature 3. repetitive rating: pulse width limit ed by maximum junction temperature 4. l =8.33mh, i as = 12a, v dd = 50v, r g = 25 ? , starting t j = 25c 5. i sd 12a, di/dt 200a/s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol rating unit junction to ambient ja 62.5 c/w junction to case jc 2.31 c/w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 500 v drain-source leakage current i dss v ds =500v, v gs =0v 10 a forward v gs =+30v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =6a 0.39 0.52 ? dynamic parameters input capacitance c iss 850 1500 pf output capacitance c oss 160 210 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 10 22 pf switching parameters total gate charge q g 36 45 nc gate to source charge q gs 10 nc gate to drain charge q gd v gs =10v, v ds =50v, i d =1.3a (note 1, 2) 10 nc turn-on delay time t d(on) 75 90 ns rise time t r 125 150 ns turn-off delay time t d(off) 190 210 ns fall-time t f v dd =30v, i d =0.5a, r g =25 ? (note 1, 2) 125 150 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 12 a maximum body-diode pulsed current i sm 48 a drain-source diode forward voltage v sd i s =12a, v gs =0v 1.5 v notes: 1. pulse test: pulse width 300s, duty cycle 2%. 2. essentially independent of operating temperature.
12n50k-mt power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-b26.c ? test circuits and waveforms 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
12n50k-mt power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-b26.c ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
12n50k-mt power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-b26.c ? typical characteristics drain current vs. drain-source breakdown voltage drain-source breakdown voltage, bv dss (v) 0.6 0 drain current vs. gate threshold voltage gate threshold voltage, v th (v) 1.8 2.4 3.6 1.2 3.0 0 50 100 150 200 250 300 0 120 360 480 600 240 0 50 100 150 200 250 300 720 4.2 drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (v) 0 3 7.5 00.511.52 v gs =10v, i d =6a 1.5 4.5 6 3 0 body-diode continuous current vs. source to drain voltage source to drain voltage, v sd (v) body-diode continuous current, i s (a) 0.2 0.4 0.6 0.8 1.0 0 3 6 9 12 14 2.5 1.2 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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